| 10840255 |
Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures |
Jordan D. Greenlee, John Mark Meldrim |
2020-11-17 |
| 10777651 |
Gate stacks |
Yushi Hu, John Mark Meldrim, Eric Blomiley, Matthew J. King |
2020-09-15 |
| 10731273 |
Source material for electronic device applications |
John Mark Meldrim, Yushi Hu, Yongjun Jeff Hu |
2020-08-04 |
| 10720574 |
Phase change memory stack with treated sidewalls |
Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin |
2020-07-21 |
| 10700091 |
Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars |
David Ross Economy, John Mark Meldrim, Haoyu Li, Yongjun Jeff Hu, Christopher W. Petz +1 more |
2020-06-30 |
| 10692572 |
Variable resistance memory stack with treated sidewalls |
Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz |
2020-06-23 |
| 10573661 |
Methods of filling horizontally-extending openings of integrated assemblies |
Jordan D. Greenlee, Chet E. Carter, Collin Howder, John Mark Meldrim |
2020-02-25 |
| 10559579 |
Assemblies having vertically-stacked conductive structures |
Jordan D. Greenlee, John Mark Meldrim |
2020-02-11 |
| 10546848 |
Integrated assemblies and methods of forming integrated assemblies |
Daniel Billingsley, Christopher W. Petz, Haoyu Li, John Mark Meldrim, Yongjun Jeff Hu |
2020-01-28 |
| 10546895 |
Phase change memory stack with treated sidewalls |
Yongjun Jeff Hu, Tsz W. Chan, Swapnil Lengade, Shu Qin |
2020-01-28 |
