Issued Patents 2020
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10861861 | Memory including a perovskite material | Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri E. Nikonov, Sou-Chi Chang +1 more | 2020-12-08 |
| 10832761 | Polarization gate stack SRAM | Daniel H. Morris, Ian A. Young | 2020-11-10 |
| 10777250 | Save-restore circuitry with metal-ferroelectric-metal devices | Kaushik Vaidyanathan, Daniel H. Morris, Huichu Liu, Dileep J. Kurian, Tanay Karnik +1 more | 2020-09-15 |
| 10734378 | Transistor threshold voltage variation optimization | Daniel H. Morris, Ian A. Young | 2020-08-04 |
| 10720434 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, David L. Kencke, Ibrahim Ban | 2020-07-21 |
| 10720438 | Memory array with ferroelectric elements | Daniel H. Morris, Ian A. Young | 2020-07-21 |
| 10720504 | Transistor with dynamic threshold voltage for low-leakage standby and high speed active mode | Daniel H. Morris, Ian A. Young | 2020-07-21 |
| 10707846 | Tunnel field-effect transistor (TFET) based high-density and low-power sequential | Daniel H. Morris, Ian A. Young | 2020-07-07 |
| 10651182 | Three-dimensional ferroelectric NOR-type memory | Daniel H. Morris, Ian A. Young | 2020-05-12 |
| 10573385 | Ferroelectric based memory cell with non-volatile retention | Daniel H. Morris, Ian A. Young | 2020-02-25 |
| 10559349 | Polarization gate stack SRAM | Daniel H. Morris, Ian A. Young | 2020-02-11 |
| 10553694 | Transistors with temperature compensating gate structures | Daniel H. Morris, Ian A. Young | 2020-02-04 |
| 10535770 | Scaled TFET transistor formed using nanowire with surface termination | Rafael Rios, Kelin J. Kuhn, Ian A. Young, Justin R. Weber | 2020-01-14 |