Issued Patents 2020
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10851474 | Thermal control for formation and processing of aluminum nitride | Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao +1 more | 2020-12-01 |
| 10854797 | Photon extraction from ultraviolet light-emitting devices | Ken Kitamura, Masato Toita, Hironori Ishii, Yuting Wang, Jianfeng Chen +1 more | 2020-12-01 |
| 10801127 | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them | Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack | 2020-10-13 |
| 10777706 | Electrochemical removal of aluminum nitride substrates for electronic and optoelectronic devices | Ken Kitamura, Jianfeng Chen | 2020-09-15 |
| 10756234 | Aluminum nitride substrate removal for ultraviolet light-emitting devices | James R. Grandusky, Craig Moe | 2020-08-25 |
| 10700237 | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets | Craig Moe, James R. Grandusky, Shawn R. Gibb, Kosuke Sato, Tomohiro Morishita | 2020-06-30 |
| 10697085 | Defect reduction in seeded aluminum nitride crystal growth | Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack | 2020-06-30 |
| 10692980 | Doped aluminum nitride crystals and methods of making them | Glen A. Slack | 2020-06-23 |
| 10615322 | Photon extraction from nitride ultraviolet light-emitting devices | Jianfeng Chen, James R. Grandusky | 2020-04-07 |
| 10612156 | Two-stage seeded growth of large aluminum nitride single crystals | Robert T. Bondokov, James R. Grandusky | 2020-04-07 |
| 10550493 | Thermal control for formation and processing of aluminum nitride | Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao +1 more | 2020-02-04 |