MR

Mark S. Rodder

Samsung: 14 patents #168 of 16,573Top 2%
University Of Texas System: 1 patents #134 of 892Top 20%
📍 Dallas, TX: #5 of 797 inventorsTop 1%
🗺 Texas: #135 of 17,606 inventorsTop 1%
Overall (2019): #4,320 of 560,194Top 1%
14
Patents 2019

Issued Patents 2019

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
10510665 Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same Ganesh Hegde, Jorge A. Kittl, Chris Bowen 2019-12-17
10475930 Method of forming crystalline oxides on III-V materials Wei-E Wang, Robert M. Wallace, Xiaoye Qin 2019-11-12
10446400 Method of forming multi-threshold voltage devices and devices so formed Wei-E Wang, Borna J. Obradovic 2019-10-15
10424581 Sub 59 MV/decade SI CMOS compatible tunnel FET as footer transistor for power gating Titash Rakshit, Rwik Sengupta 2019-09-24
10381271 Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same Borna J. Obradovic 2019-08-13
10381315 Method and system for providing a reverse-engineering resistant hardware embedded security module Harsono S. Simka, Ganesh Hegde, Joon Goo Hong, Rwik Sengupta 2019-08-13
10361195 Semiconductor device with an isolation gate and method of forming Rwik Sengupta 2019-07-23
10312152 Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same Borna J. Obradovic, Joon Goo Hong, Seung Hun Lee, Pan-Kwi Park, Seung-ryul Lee 2019-06-04
10297673 Methods of forming semiconductor devices including conductive contacts on source/drains Jorge A. Kittl, Ganesh Hegde, Rwik Sengupta, Borna J. Obradovic 2019-05-21
10283638 Structure and method to achieve large strain in NS without addition of stack-generated defects Jorge A. Kittl, Ganesh Hegde, Robert C. Bowen 2019-05-07
10205025 Methods to achieve strained channel finFET devices Jorge A. Kittl, Joon Goo Hong, Dharmendar Reddy Palle 2019-02-12
10199474 Field effect transistor with decoupled channel and methods of manufacturing the same Borna J. Obradovic 2019-02-05
10181527 FinFet having dual vertical spacer and method of manufacturing the same Dharmendar Reddy Palle, Borna J. Obradovic, Joon Goo Hong 2019-01-15
10170549 Strained stacked nanosheet FETs and/or quantum well stacked nanosheet Jorge A. Kittl, Borna J. Obradovic, Robert C. Bowen 2019-01-01