Issued Patents 2019
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510883 | Asymmetric source and drain structures in semiconductor devices | Peng Wang | 2019-12-17 |
| 10504770 | FinFET structure with different fin heights and method for forming the same | Chi Kang Liu, Chi-Wen Liu | 2019-12-10 |
| 10504729 | Methods for controlling an end-to-end distance in semiconductor device | Tsai-Chun Li, Huan-Just Lin, Huang-Ming Chen, Yang-Cheng Wu, Cheng-Hua Yang | 2019-12-10 |
| 10504724 | Selective film growth for bottom-up gap filling | De-Wei Yu | 2019-12-10 |
| 10418456 | Method of fabricating a semiconductor device having modified profile metal gate | Chi-Wen Liu, Clement Hsingjen Wann, Ming-Huan Tsai, Zhao-Cheng Chen | 2019-09-17 |
| 10367094 | Source/drain structure having multi-facet surfaces | Tung Ying Lee, Winnie Victoria Wei-Ning Chen | 2019-07-30 |
| 10354998 | Structures and methods for fabricating semiconductor devices using fin structures | Chi Kang Liu, Yung-Ta Li, Chun-Hsiang Fan, Tung Ying Lee, Clement Hsing Jen Wann | 2019-07-16 |
| 10312145 | Asymmetric source/drain epitaxy | — | 2019-06-04 |
| 10312089 | Methods for controlling an end-to-end distance in semiconductor device | Tsai-Chun Li, Huan-Just Lin, Huang-Ming Chen, Yang-Cheng Wu, Cheng-Hua Yang | 2019-06-04 |
| 10199502 | Structure of S/D contact and method of making same | Tung Ying Lee, Chun-Hsiang Fan | 2019-02-05 |
| 10170305 | Selective film growth for bottom-up gap filling | De-Wei Yu | 2019-01-01 |
| 10170332 | FinFET thermal protection methods and related structures | — | 2019-01-01 |