Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10468590 | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory | Mustafa Pinarbasi, Jacob Anthony Hernandez | 2019-11-05 |
| 10468588 | Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer | Manfred Ernst Schabes, Mustafa Pinarbasi | 2019-11-05 |
| 10461242 | Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications | Jorge Vasquez, Mustafa Pinarbasi, Georg Wolf | 2019-10-29 |
| 10424723 | Magnetic tunnel junction devices including an optimization layer | Thomas Dudley Boone, Jr., Pradeep Manandhar, Manfred Ernst Schabes, Mustafa Pinarbasi | 2019-09-24 |
| 10424357 | Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer | Michail Tzoufras, Elizabeth Dobisz, Marcin Gajek, Davide Guarisco | 2019-09-24 |
| 10388853 | Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers | Jorge Vasquez, Georg Wolf, Mustafa Pinarbasi | 2019-08-20 |
| 10374153 | Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material | Jorge Vasquez, Mustafa Pinarbasi, Girish Jagtiani | 2019-08-06 |
| 10374147 | Perpendicular magnetic tunnel junction having improved reference layer stability | Mustafa Pinarbasi, Jorge Vasquez, Manfred Ernst Schabes | 2019-08-06 |
| 10367139 | Methods of manufacturing magnetic tunnel junction devices | Thomas Dudley Boone, Jr., Pradeep Manandhar, Manfred Ernst Schabes, Mustafa Pinarbasi | 2019-07-30 |
| 10367136 | Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure | Jorge Vasquez, Mustafa Pinarbasi, Georg Wolf | 2019-07-30 |
| 10339993 | Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching | Manfred Ernst Schabes, Mustafa Pinarbasi | 2019-07-02 |
| 10319900 | Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density | Manfred Ernst Schabes, Mustafa Pinarbasi | 2019-06-11 |
| 10236439 | Switching and stability control for perpendicular magnetic tunnel junction device | Manfred Ernst Schabes, Mustafa Pinarbasi | 2019-03-19 |
| 10211395 | Method for combining NVM class and SRAM class MRAM elements on the same chip | Mustafa Pinarbasi, Thomas Dudley Boone, Jr. | 2019-02-19 |