Issued Patents 2019
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10516094 | Process for creating dense pillars using multiple exposures for MRAM fabrication | Prachi Shrivastava, Thomas Dudley Boone, Jr. | 2019-12-24 |
| 10468590 | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory | Bartlomiej Adam Kardasz, Jacob Anthony Hernandez | 2019-11-05 |
| 10468588 | Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer | Manfred Ernst Schabes, Bartlomiej Adam Kardasz | 2019-11-05 |
| 10461242 | Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications | Bartlomiej Adam Kardasz, Jorge Vasquez, Georg Wolf | 2019-10-29 |
| 10446742 | Method for manufacturing a magnetic memory element array using high angle side etch to open top electrical contact | Marcin Gajek, Eric Michael Ryan | 2019-10-15 |
| 10424723 | Magnetic tunnel junction devices including an optimization layer | Thomas Dudley Boone, Jr., Pradeep Manandhar, Manfred Ernst Schabes, Bartlomiej Adam Kardasz | 2019-09-24 |
| 10411185 | Process for creating a high density magnetic tunnel junction array test platform | Pradeep Manandhar, Prachi Shrivastava, Thomas Dudley Boone, Jr. | 2019-09-10 |
| 10388860 | Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard mask | Elizabeth Dobisz, Girish Jagtiani, Yuan-Tung Chin, Thomas Dudley Boone, Jr. | 2019-08-20 |
| 10388853 | Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers | Bartlomiej Adam Kardasz, Jorge Vasquez, Georg Wolf | 2019-08-20 |
| 10381553 | Memory cell having magnetic tunnel junction and thermal stability enhancement layer | Bartek Kardasz | 2019-08-13 |
| 10374147 | Perpendicular magnetic tunnel junction having improved reference layer stability | Bartlomiej Adam Kardasz, Jorge Vasquez, Manfred Ernst Schabes | 2019-08-06 |
| 10374153 | Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material | Jorge Vasquez, Bartlomiej Adam Kardasz, Girish Jagtiani | 2019-08-06 |
| 10367139 | Methods of manufacturing magnetic tunnel junction devices | Thomas Dudley Boone, Jr., Pradeep Manandhar, Manfred Ernst Schabes, Bartlomiej Adam Kardasz | 2019-07-30 |
| 10367136 | Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure | Bartlomiej Adam Kardasz, Jorge Vasquez, Georg Wolf | 2019-07-30 |
| 10361359 | Magnetic random access memory with reduced internal operating temperature range | Manfred Ernst Schabes, Thomas Dudley Boone, Jr. | 2019-07-23 |
| 10339993 | Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching | Manfred Ernst Schabes, Bartlomiej Adam Kardasz | 2019-07-02 |
| 10319900 | Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density | Manfred Ernst Schabes, Bartlomiej Adam Kardasz | 2019-06-11 |
| 10236439 | Switching and stability control for perpendicular magnetic tunnel junction device | Manfred Ernst Schabes, Bartlomiej Adam Kardasz | 2019-03-19 |
| 10211395 | Method for combining NVM class and SRAM class MRAM elements on the same chip | Bartlomiej Adam Kardasz, Thomas Dudley Boone, Jr. | 2019-02-19 |