Issued Patents 2019
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10492106 | Adaptive data rate control method and adaptive data rate control system | Young-Hwan Yoo | 2019-11-26 |
| 10460780 | Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory | Chando Park, Seung H. Kang | 2019-10-29 |
| 10381060 | High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array | Jimmy Jianan Kan, Chando Park, Peiyuan Wang, Seung H. Kang | 2019-08-13 |
| 10340297 | Display device | KWIHYUN KIM, Yoon-Jang Kim, Yunseok Lee | 2019-07-02 |
| 10319425 | Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits | Seong-Ook Jung, Byungkyu Song, Jung Pill Kim, Seung H. Kang | 2019-06-11 |
| 10311930 | One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations | Chando Park, Seung H. Kang | 2019-06-04 |
| 10290340 | Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation | Seong-Ook Jung, Sara Choi, Hong Keun Ahn, Seung H. Kang | 2019-05-14 |
| 10263645 | Error correction and decoding | Seong-Ook Jung, Sara Choi, Byung Kyu Song, Taehui Na, Jisu Kim +3 more | 2019-04-16 |
| 10249814 | Dynamic memory protection | Chando Park, Seung H. Kang, Wei-Chuan Chen | 2019-04-02 |
| 10224087 | Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells | Seong-Ook Jung, Sara Choi, Hong Keun Ahn, Seung H. Kang | 2019-03-05 |