RB

Robert C. Bowen

Samsung: 2 patents #3,785 of 16,573Top 25%
🗺 Texas: #3,232 of 17,606 inventorsTop 20%
Overall (2019): #127,462 of 560,194Top 25%
2
Patents 2019

Issued Patents 2019

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
10283638 Structure and method to achieve large strain in NS without addition of stack-generated defects Jorge A. Kittl, Ganesh Hegde, Mark S. Rodder 2019-05-07
10170549 Strained stacked nanosheet FETs and/or quantum well stacked nanosheet Jorge A. Kittl, Borna J. Obradovic, Mark S. Rodder 2019-01-01