Issued Patents 2019
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510391 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Jeong-Heon Park, Daniel C. Worledge | 2019-12-17 |
| 10510390 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Jeong-Heon Park, Daniel C. Worledge | 2019-12-17 |
| 10468455 | Simplified double magnetic tunnel junctions | Younghyun Kim, Jeong-Heon Park, Daniel C. Worledge | 2019-11-05 |
| 10453509 | Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention | Daniel C. Worledge | 2019-10-22 |
| 10374145 | In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers | Stephen L. Brown, Jonathan Z. Sun, Daniel C. Worledge | 2019-08-06 |
| 10361361 | Thin reference layer for STT MRAM | Younghyun Kim, Daniel C. Worledge | 2019-07-23 |
| 10347827 | Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory | — | 2019-07-09 |
| 10332576 | Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention | Daniel C. Worledge | 2019-06-25 |
| 10294561 | Growth of metal on a dielectric | Daniel C. Worledge | 2019-05-21 |
| 10256399 | Fabricating a cap layer for a magnetic random access memory (MRAM) device | Kwangseok KIM, Younghyun Kim, Jung Hyuk Lee, Jeong-Heon Park | 2019-04-09 |
| 10230043 | Boron segregation in magnetic tunnel junctions | Younghyun Kim, Chandrasekara Kothandaraman, Jeong-Heon Park | 2019-03-12 |