Issued Patents 2019
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10403541 | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantation | Qingmin Liu | 2019-09-03 |
| 10224233 | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation | Qingmin Liu | 2019-03-05 |