JL

Jeffrey L. Libbert

GC Globalwafers Co.: 8 patents #2 of 68Top 3%
📍 O'Fallon, MO: #2 of 101 inventorsTop 2%
🗺 Missouri: #23 of 2,707 inventorsTop 1%
Overall (2019): #11,081 of 560,194Top 2%
9
Patents 2019

Issued Patents 2019

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
10490464 Methods for assessing semiconductor structures Igor Rapoport, Srikanth Kommu, Igor Peidous, Gang Wang 2019-11-26
10483152 High resistivity semiconductor-on-insulator wafer and a method of manufacturing Igor Peidous, Lu Fei, Andrew M. Jones, Alex Usenko, Gang Wang +2 more 2019-11-19
10475695 High resistivity silicon-on-insulator substrate comprising an isolation region Igor Peidous 2019-11-12
10475696 Method of manufacture of a semiconductor on insulator structure Henry F. Erk, Sasha Kweskin, Mayank Bulsara 2019-11-12
10468294 High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface Igor Peidous, Andrew M. Jones, Srikanth Kommu, Gang Wang 2019-11-05
10381261 Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers Igor Peidous, Srikanth Kommu, Andrew M. Jones, Samuel Christopher Pratt, Horacio Josue Mendez +2 more 2019-08-13
10381260 Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers Igor Peidous, Srikanth Kommu, Andrew M. Jones, Samuel Christopher Pratt, Horacio Josue Mendez +2 more 2019-08-13
10283402 Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress Gang Wang, Shawn George Thomas, Igor Peidous 2019-05-07
10269617 High resistivity silicon-on-insulator substrate comprising an isolation region Igor Peidous 2019-04-23