Issued Patents 2018
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10158016 | MOS devices with non-uniform p-type impurity profile | Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li | 2018-12-18 |
| 10084089 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Chii-Horng Li, Tze-Liang Lee | 2018-09-25 |
| 10062781 | MOS devices having epitaxy regions with reduced facets | Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok | 2018-08-28 |
| 10026662 | Semiconductor structure and fabricating method thereof | Chih-Chiang Chang, Kun-Mu Li | 2018-07-17 |
| 10014411 | Modulating germanium percentage in MOS devices | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2018-07-03 |
| 9991364 | Transistor strain-inducing scheme | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2018-06-05 |
| 9953836 | Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure | Tsung-Yao Wen, Sheng-Chen Wang, Sai-Hooi Yeong, Ya-Yun Cheng | 2018-04-24 |
| 9911826 | Devices with strained source/drain structures | Tsz-Mei Kwok, Kuan-Yu Chen, Hsien-Hsin Lin | 2018-03-06 |