Issued Patents 2018
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164062 | FinFET device having a channel defined in a diamond-like shape semiconductor structure | You-Ru Lin, Chih-Hsin Ko, Clement Hsingjen Wann | 2018-12-25 |
| 10164023 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Chih-Hsin Ko, Clement Hsingjen Wann | 2018-12-25 |
| 10163628 | Lattice-mismatched semiconductor substrates with defect reduction | I-Sheng Chen | 2018-12-25 |
| 10158015 | FinFETs with strained well regions | Yi-Jing Lee, Chih-Hsin Ko, Clement Hsingjen Wann | 2018-12-18 |
| 10147819 | Semiconductor device and manufacturing method thereof | I-Sheng Chen, Chih Chieh Yeh | 2018-12-04 |
| 10134843 | Multi-gate device and method of fabrication thereof | I-Sheng Chen, Chih Chieh Yeh, Yee-Chia Yeo | 2018-11-20 |
| 10115826 | Semiconductor structure and the manufacturing method thereof | Yi-Jing Lee, Chih-Hsin Ko, Clement Hsingjen Wann | 2018-10-30 |
| 10096710 | Method of forming strained structures of semiconductor devices | Chih-Hsin Ko, Clement Hsingjen Wann | 2018-10-09 |
| 10084069 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Chih-Hsin Ko | 2018-09-25 |
| 10062782 | Method of manufacturing a semiconductor device with multilayered channel structure | Chao-Ching Cheng, Chih Chieh Yeh, Hung-Li Chiang, Jung-Piao Chiu, Tzu-Chiang Chen +3 more | 2018-08-28 |
| 10026641 | Isolation structure of semiconductor device | Shu-Han Chen, Clement Hsingjen Wann, Chih-Hsin Ko | 2018-07-17 |
| 10002969 | Semiconductor device and manufacturing method thereof | I-Sheng Chen, Chih Chieh Yeh | 2018-06-19 |
| 9985131 | Source/drain profile for FinFET | Ta-Chun Ma, Chih-Hsin Ko, Clement Hsingjen Wann | 2018-05-29 |
| 9922828 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Chih-Hsin Ko | 2018-03-20 |
| 9873900 | RNA-mediated gene assembly from DNA oligonucleotides | Lloyd M. Smith | 2018-01-23 |
| 9870920 | Growing III-V compound semiconductors from trenches filled with intermediate layers | Chih-Hsin Ko, Clement Hsingjen Wann | 2018-01-16 |
| 9859380 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Chih-Hsin Ko, Clement Hsingjen Wann | 2018-01-02 |