Issued Patents 2018
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10134808 | Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) | Jimmy Jianan Kan, Chando Park, Matthias Georg Gottwald | 2018-11-20 |
| 10109674 | Semiconductor metallization structure | Yu Lu | 2018-10-23 |
| 10103319 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Chando Park | 2018-10-16 |
| 10102898 | Ferroelectric-modulated Schottky non-volatile memory | Xia Li, Jeffrey Junhao Xu | 2018-10-16 |
| 10102895 | Back gate biasing magneto-resistive random access memory (MRAM) bit cells to reduce or avoid write operation failures caused by source degeneration | Xia Li | 2018-10-16 |
| 10096649 | Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices | Chando Park, Jimmy Jianan Kan | 2018-10-09 |
| 10060880 | Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing | Wei-Chuan Chen, Jung Pill Kim | 2018-08-28 |
| 10043967 | Self-compensation of stray field of perpendicular magnetic elements | Wei-Chuan Chen, Xiaochun Zhu, Xia Li, Yu Lu, Chando Park | 2018-08-07 |
| 9966149 | OTP cell with reversed MTJ connection | Jung Pill Kim, Taehyun Kim, Kangho Lee, Xia Li, Wah Nam Hsu | 2018-05-08 |
| 9935258 | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device | Wei-Chuan Chen, Kangho Lee, Xiaochun Zhu | 2018-04-03 |
| 9929211 | Reducing spin pumping induced damping of a free layer of a memory device | Xiaochun Zhu, Xia Li | 2018-03-27 |
| 9875784 | Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems | Xia Li, Bin Yang, Gengming Tao | 2018-01-23 |
| 9870811 | Physically unclonable function based on comparison of MTJ resistances | Peiyuan Wang, Jung Pill Kim, Jimmy Jianan Kan, Chando Park | 2018-01-16 |
| 9865798 | Electrode structure for resistive memory device | Yu Lu, Junjing Bao, Xia Li | 2018-01-09 |