| 10134808 |
Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) |
Jimmy Jianan Kan, Matthias Georg Gottwald, Seung H. Kang |
2018-11-20 |
| 10103319 |
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices |
Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Seung H. Kang |
2018-10-16 |
| 10096649 |
Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices |
Jimmy Jianan Kan, Seung H. Kang |
2018-10-09 |
| 10043967 |
Self-compensation of stray field of perpendicular magnetic elements |
Wei-Chuan Chen, Xiaochun Zhu, Xia Li, Yu Lu, Seung H. Kang |
2018-08-07 |
| 9870811 |
Physically unclonable function based on comparison of MTJ resistances |
Peiyuan Wang, Jung Pill Kim, Jimmy Jianan Kan, Seung H. Kang |
2018-01-16 |