Issued Patents 2018
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10157983 | Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands | Jun Zeng, Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Shih-Tzung Su | 2018-12-18 |
| 9947779 | Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage | Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su | 2018-04-17 |