| 10157983 |
Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands |
Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Kui Pu, Shih-Tzung Su |
2018-12-18 |
| 10128353 |
Trench transistors and methods with low-voltage-drop shunt to body diode |
Mohamed N. Darwish, Richard A. Blanchard |
2018-11-13 |
| 10014365 |
Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges |
Mohamed N. Darwish, Richard A. Blanchard |
2018-07-03 |
| 10014404 |
MOS-gated power devices, methods, and integrated circuits |
Mohamed N. Darwish |
2018-07-03 |
| 9997614 |
Lateral transistors and methods with low-voltage-drop shunt to body diode |
Mohamed N. Darwish, Richard A. Blanchard |
2018-06-12 |
| 9967947 |
LED driving circuit for controlling leakage current and compatible with ballast |
— |
2018-05-08 |
| 9947779 |
Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage |
Mohamed N. Darwish, Kui Pu, Shih-Tzung Su |
2018-04-17 |
| 9930745 |
LED driving circuit for controlling leakage current |
— |
2018-03-27 |
| 9923556 |
Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield |
Mohamed N. Darwish |
2018-03-20 |
| 9859400 |
Trench transistors and methods with low-voltage-drop shunt to body diode |
Mohamed N. Darwish, Richard A. Blanchard |
2018-01-02 |