| 9843322 |
Integrated high-side driver for P-N bimodal power device |
Yongxi Zhang, Philip L. Hower, Salvatore Giombanco, Filippo Marino, Seetharaman Sridhar |
2017-12-12 |
$24,947,000 |
| 9831320 |
High voltage lateral DMOS transistor with optimized source-side blocking capability |
Philip L. Hower, Marie Denison |
2017-11-28 |
$13,929,000 |
| 9812439 |
Bi-directional ESD protection circuit |
Timothy Patrick Pauletti, Wayne T. Chen, Jonathan Brodsky, Robert Steinhoff |
2017-11-07 |
$9,126,000 |
| 9806190 |
High voltage drain extension on thin buried oxide SOI |
Marie Denison, Philip L. Hower |
2017-10-31 |
$20,806,000 |
| 9806074 |
High voltage multiple channel LDMOS |
Yongxi Zhang |
2017-10-31 |
$20,806,000 |
| 9793375 |
High voltage lateral DMOS transistor with optimized source-side blocking capability |
Philip L. Hower, Marie Denison |
2017-10-17 |
$19,424,000 |
| 9786665 |
Dual deep trenches for high voltage isolation |
Binghua Hu, Alexei Sadovnikov, Guru Mathur |
2017-10-10 |
$21,850,000 |
| 9741718 |
High voltage CMOS with triple gate oxide |
Binghua Hu, Pinghai Hao, Seetharaman Sridhar, Jarvis Benjamin Jacobs |
2017-08-22 |
$8,817,000 |
| 9735265 |
Reduced area power devices using deep trench isolation |
Yongxi Zhang, Seetharaman Sridhar |
2017-08-15 |
$14,729,000 |
| 9685545 |
Isolated III-N semiconductor devices |
Naveen Tipirneni |
2017-06-20 |
$24,657,000 |
| 9673273 |
High breakdown n-type buried layer |
Binghua Hu, Henry Litzmann Edwards |
2017-06-06 |
$20,865,000 |
| 9660021 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Guru Mathur |
2017-05-23 |
$14,174,000 |
| 9653577 |
Diluted drift layer with variable stripe widths for power transistors |
Yongxi Zhang, Scott Balster |
2017-05-16 |
$14,470,000 |
| 9633849 |
Implant profiling with resist |
Binghua Hu |
2017-04-25 |
$12,851,000 |
| 9608105 |
Semiconductor structure with a doped region between two deep trench isolation structures |
Takehito Tamura, Binghua Hu, Guru Mathur |
2017-03-28 |
$12,754,000 |
| 9608088 |
Hybrid active-field gap extended drain MOS transistor |
John Lin |
2017-03-28 |
$12,754,000 |
| 9583596 |
Drain extended CMOS with counter-doped drain extension |
Philipp Steinmann, Amitava Chatterjee |
2017-02-28 |
$12,848,000 |
| 9583579 |
Poly sandwich for deep trench fill |
Binghua Hu, Jarvis Benjamin Jacobs |
2017-02-28 |
$12,848,000 |
| 9577033 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Guru Mathur |
2017-02-21 |
$11,965,000 |
| 9559093 |
Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component |
Naveen Tipirneni |
2017-01-31 |
$22,242,000 |
| 9553151 |
III-nitride device and method having a gate isolating structure |
Naveen Tipirneni, Jungwoo Joh |
2017-01-24 |
$24,511,000 |
| 9553011 |
Deep trench isolation with tank contact grounding |
Yongxi Zhang, Eugen Pompiliu Mindricelu, Seetharaman Sridhar |
2017-01-24 |
$24,511,000 |
| 9543299 |
P-N bimodal conduction resurf LDMOS |
Yongxi Zhang, Henry Litzmann Edwards |
2017-01-10 |
$13,603,000 |
| 9543944 |
Driver for normally on III-nitride transistors to get normally-off functionality |
Naveen Tipirneni |
2017-01-10 |
$13,603,000 |
| 9543149 |
High voltage lateral extended drain MOS transistor with improved drift layer contact |
Philip L. Hower, Marie Denison |
2017-01-10 |
$13,603,000 |