Issued Patents 2017
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9732438 | Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate | Ralf Mueller, Matthias Stockmeier | 2017-08-15 |
| 9590046 | Monocrystalline SiC substrate with a non-homogeneous lattice plane course | Thomas Straubinger, Andreas Wohlfart | 2017-03-07 |