MS

Matthias Stockmeier

SG Sicrystal Gmbh: 1 patents #2 of 5Top 40%
Overall (2017): #315,663 of 506,227Top 65%
1
Patents 2017

Issued Patents 2017

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
9732438 Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate Ralf Mueller, Michael Vogel 2017-08-15