| 9842639 |
Systems and methods for managing read voltages in a cross-point memory array |
Frank Guo |
2017-12-12 |
| 9837418 |
Thyristor volatile random access memory and methods of manufacture |
Harry Luan, Valery Axelrad, Charlie Cheng |
2017-12-05 |
| 9837149 |
Low read current architecture for memory |
Christophe J. Chevallier, Darrell Rinerson, Chang Hua Siau |
2017-12-05 |
| 9748223 |
Six-transistor SRAM semiconductor structures and methods of fabrication |
Harry Luan, Valery Axelrad, Charlie Cheng, Christophe J. Chevallier |
2017-08-29 |
| 9741413 |
Methods of reading six-transistor cross-coupled thyristor-based SRAM memory cells |
Harry Luan, Valery Axelrad, Charlie Cheng |
2017-08-22 |
| 9691480 |
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
Chang Hua Siau |
2017-06-27 |
| 9691821 |
Vertical cross-point arrays for ultra-high-density memory applications |
— |
2017-06-27 |
| 9653151 |
Memory array having segmented row addressed page registers |
Adrian E. Ong |
2017-05-16 |
| 9613968 |
Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication |
Harry Luan, Valery Axelrad, Charlie Cheng, Christophe J. Chevallier |
2017-04-04 |
| 9570459 |
Vertical gate NAND memory devices |
— |
2017-02-14 |
| 9564199 |
Methods of reading and writing data in a thyristor random access memory |
Harry Luan, Valery Axelrad, Charlie Cheng |
2017-02-07 |
| 9564441 |
Two-transistor SRAM semiconductor structure and methods of fabrication |
Harry Luan, Valery Axelrad, Charlie Cheng, Christophe J. Chevallier |
2017-02-07 |
| 9564198 |
Six-transistor SRAM semiconductor structures and methods of fabrication |
Harry Luan, Valery Axelrad, Charlie Cheng, Christophe J. Chevallier |
2017-02-07 |