Issued Patents 2017
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9847130 | Selector device for two-terminal memory | — | 2017-12-19 |
| 9805794 | Enhanced erasing of two-terminal memory | Zhi Li, Tanmay Kumar | 2017-10-31 |
| 9793474 | Low temperature P+ polycrystalline silicon material for non-volatile memory device | Xin Sun, Tanmay Kumar | 2017-10-17 |
| 9793147 | Transporting system and transporting unit included therein | Kun-Jin Ryu, Hyun Min Lee, Youn-Boo Jung | 2017-10-17 |
| 9768234 | Resistive memory architecture and devices | — | 2017-09-19 |
| 9761635 | Selector device for two-terminal memory | — | 2017-09-12 |
| 9735357 | Resistive memory cell with intrinsic current control | Xianliang Liu, Xu Zhao, Zeying Ren, FNU Atiquzzaman, Joanna Bettinger +1 more | 2017-08-15 |
| 9735358 | Noble metal / non-noble metal electrode for RRAM applications | Kuk-Hwan Kim, Tanmay Kumar | 2017-08-15 |
| 9698201 | High density selector-based non volatile memory cell and fabrication | Hagop Nazarian, Harry Yue Gee | 2017-07-04 |
| 9685483 | Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process | Hagop Nazarian, Harry Yue Gee | 2017-06-20 |
| 9685608 | Reduced diffusion in metal electrode for two-terminal memory | Steven Patrick Maxwell | 2017-06-20 |
| 9673255 | Resistive memory device and fabrication methods | Kuk-Hwan Kim, Tanmay Kumar | 2017-06-06 |
| 9633724 | Sensing a non-volatile memory device utilizing selector device holding characteristics | Hagop Nazarian, Lin Shih Liu | 2017-04-25 |
| 9627614 | Resistive switching for non volatile memory device using an integrated breakdown element | Wei Lu | 2017-04-18 |
| 9627443 | Three-dimensional oblique two-terminal memory with enhanced electric field | Joanna Bettinger, Xianliang Liu | 2017-04-18 |
| 9620206 | Memory array architecture with two-terminal memory cells | Hagop Nazarian, Wei Lu | 2017-04-11 |
| 9613694 | Enhanced programming of two-terminal memory | Zhi Li, Tanmay Kumar | 2017-04-04 |
| 9601690 | Sub-oxide interface layer for two-terminal memory | Harry Yue Gee, Mark Clark, Steven Patrick Maxwell, Natividad Vasquez | 2017-03-21 |
| 9601692 | Hetero-switching layer in a RRAM device and method | — | 2017-03-21 |
| RE46335 | Switching device having a non-linear element | Wei Lu, Hagop Nazarian | 2017-03-07 |
| 9590013 | Device switching using layered device structure | Wei Lu | 2017-03-07 |
| 9570678 | Resistive RAM with preferental filament formation region and methods | Hagop Nazarian | 2017-02-14 |
| 9570683 | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects | Kuk-Hwan Kim, Joanna Bettinger | 2017-02-14 |
| 9564587 | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects | Kuk-Hwan Kim, Joanna Bettinger | 2017-02-07 |
| 9559299 | Scaling of filament based RRAM | — | 2017-01-31 |