Issued Patents 2017
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9734011 | Two-terminal memory set features type mechanisms enhancements | Kuk-Hwan Kim | 2017-08-15 |
| 9729155 | Field programmable gate array utilizing two-terminal non-volatile memory | Sang Thanh Nguyen, Tanmay Kumar | 2017-08-08 |
| 9727258 | Two-terminal memory compatibility with NAND flash memory set features type mechanisms | Kuk-Hwan Kim | 2017-08-08 |
| 9698201 | High density selector-based non volatile memory cell and fabrication | Sung Hyun Jo, Harry Yue Gee | 2017-07-04 |
| 9685483 | Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process | Sung Hyun Jo, Harry Yue Gee | 2017-06-20 |
| 9659642 | State change detection for two-terminal memory during application of a state-changing stimulus | Sang Thanh Nguyen, Cung Vu, Dzung H. Nguyen, John T. Nguyen, Tianhong Yan | 2017-05-23 |
| 9659646 | Programmable logic applications for an array of high on/off ratio and high speed non-volatile memory cells | Mehdi Asnaashari, Lin-Shih Liu | 2017-05-23 |
| 9633724 | Sensing a non-volatile memory device utilizing selector device holding characteristics | Sung Hyun Jo, Lin Shih Liu | 2017-04-25 |
| 9633723 | High operating speed resistive random access memory | Sang Thanh Nguyen | 2017-04-25 |
| 9627057 | Programming two-terminal memory cells with reduced program current | Sang Thanh Nguyen | 2017-04-18 |
| 9620206 | Memory array architecture with two-terminal memory cells | Sung Hyun Jo, Wei Lu | 2017-04-11 |
| 9601194 | NAND array comprising parallel transistor and two-terminal switching device | — | 2017-03-21 |
| 9600410 | ReRAM based NAND like architecture with configurable page size | Cliff Zitlaw | 2017-03-21 |
| RE46335 | Switching device having a non-linear element | Wei Lu, Sung Hyun Jo | 2017-03-07 |
| 9576616 | Non-volatile memory with overwrite capability and low write amplification | Sang Thanh Nguyen | 2017-02-21 |
| 9570678 | Resistive RAM with preferental filament formation region and methods | Sung Hyun Jo | 2017-02-14 |