Issued Patents 2016
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9520498 | FinFET structure and method for fabricating the same | Kuo-Cheng Ching, Chao-Hsiung Wang, Chi-Wen Liu | 2016-12-13 |
| 9484461 | Integrated circuit structure with substrate isolation and un-doped channel | Kuo-Cheng Ching | 2016-11-01 |
| 9443962 | Recessing STI to increase fin height in fin-first process | Kuo-Cheng Ching | 2016-09-13 |
| 9406778 | Semiconductor device and formation thereof | Kuo-Cheng Ching | 2016-08-02 |
| 9349837 | Recessing STI to increase Fin height in Fin-first process | Kuo-Cheng Ching | 2016-05-24 |
| 9306069 | Isolation structure of fin field effect transistor | Kuo-Cheng Ching, Chao-Hsiung Wang, Chi-Wen Liu | 2016-04-05 |
| 9281378 | Fin recess last process for FinFET fabrication | Kuo-Cheng Ching, Shi Ning Ju | 2016-03-08 |
| 9245758 | Method for fabricating silicon-doped or boron-doped aluminum electrode | Wei-Yang Ma, Chien-Chang Chao, Tsun-Neng Yang | 2016-01-26 |