Issued Patents 2016
Showing 25 most recent of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9514947 | Chromium/titanium/aluminum-based semiconductor device contact fabrication | Xuhong Hu, Michael Shur, Mikhail Gaevski | 2016-12-06 |
| 9502509 | Stress relieving semiconductor layer | Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Rakesh Jain, Michael Shur | 2016-11-22 |
| 9467105 | Perforated channel field effect transistor | Grigory Simin, Mikhail Gaevski, Michael Shur | 2016-10-11 |
| 9437774 | Deep ultraviolet light emitting diode | Maxim S. Shatalov, Michael Shur, Alexander Dobrinsky | 2016-09-06 |
| 9425353 | Heterostructure including anodic aluminum oxide layer | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky | 2016-08-23 |
| 9415126 | Reflective transparent optical chamber | Alexander Dobrinsky, Michael Shur | 2016-08-16 |
| 9412902 | Semiconductor structure with stress-reducing buffer structure | Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur | 2016-08-09 |
| 9412901 | Superlattice structure | Michael Shur, Jinwei Yang, Alexander Dobrinsky | 2016-08-09 |
| 9406840 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang +1 more | 2016-08-02 |
| 9397260 | Patterned layer design for group III nitride layer growth | Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky +1 more | 2016-07-19 |
| 9391189 | Lateral/vertical semiconductor device | Grigory Simin, Mikhail Gaevski, Michael Shur | 2016-07-12 |
| 9385271 | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang | 2016-07-05 |
| 9368580 | Semiconductor material doping | Maxim S. Shatalov, Jinwei Yang, Michael Shur | 2016-06-14 |
| 9349848 | Gateless switch with capacitively-coupled contacts | Grigory Simin, Michael Shur | 2016-05-24 |
| 9337387 | Emitting device with improved extraction | Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur | 2016-05-10 |
| 9331244 | Semiconductor structure with inhomogeneous regions | Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Rakesh Jain, Jinwei Yang +1 more | 2016-05-03 |
| 9330906 | Stress relieving semiconductor layer | Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Rakesh Jain, Michael Shur | 2016-05-03 |
| 9324560 | Patterned substrate design for layer growth | Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Michael Shur | 2016-04-26 |
| 9312347 | Semiconductor device with multiple space-charge control electrodes | Grigory Simin, Michael Shur | 2016-04-12 |
| 9312448 | Metallic contact for optoelectronic semiconductor device | Alexander Lunev, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur | 2016-04-12 |
| 9312428 | Light emitting heterostructure with partially relaxed semiconductor layer | Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur | 2016-04-12 |
| 9287442 | Semiconductor material doping | Maxim S. Shatalov, Jinwei Yang, Michael Shur, Alexander Dobrinsky | 2016-03-15 |
| 9287455 | Deep ultraviolet light emitting diode | Michael Shur, Jinwei Yang | 2016-03-15 |
| 9287449 | Ultraviolet reflective rough adhesive contact | Maxim S. Shatalov, Alexander Lunev, Alexander Dobrinsky, Jinwei Yang, Michael Shur | 2016-03-15 |
| 9281441 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang | 2016-03-08 |