| 9466369 |
Word line-dependent ramping of pass voltage and program voltage for three-dimensional memory |
Liang Pang, Yingda Dong, Jingjian Ren |
2016-10-11 |
| 9460805 |
Word line dependent channel pre-charge for memory |
Liang Pang, Yingda Dong |
2016-10-04 |
| 9455263 |
Three dimensional NAND device with channel contacting conductive source line and method of making thereof |
Yanli Zhang, Go Shoji, Johann Alsmeier, Jayavel Pachamuthu, Yingda Dong |
2016-09-27 |
| 9443605 |
Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND |
Jian Chen, Yingda Dong |
2016-09-13 |
| 9437318 |
Adaptive program pulse duration based on temperature |
Yingda Dong, Jian Chen |
2016-09-06 |
| 9406387 |
Charge redistribution during erase in charge trapping memory |
Ching-Huang Lu, Yingda Dong |
2016-08-02 |
| 9401216 |
Adaptive operation of 3D NAND memory |
Niles Yang, James Fitzpatrick |
2016-07-26 |
| 9355735 |
Data recovery in a 3D memory device with a short circuit between word lines |
Jian Chen, Yingda Dong, Charles See Yeung Kwong |
2016-05-31 |
| 9349478 |
Read with look-back combined with programming with asymmetric boosting in memory |
Yingda Dong, Charles See Yeung Kwong, Hong-Yan Chen, Liang Pang |
2016-05-24 |
| 9336891 |
Look ahead read method for non-volatile memory |
Yingda Dong, Wei Zhao |
2016-05-10 |
| 9312010 |
Programming of drain side word line to reduce program disturb and charge loss |
Yingda Dong, Ching-Huang Lu, Wei Zhao |
2016-04-12 |
| 9299443 |
Modifying program pulses based on inter-pulse period to reduce program noise |
Yingda Dong, Liang Pang |
2016-03-29 |
| 9257191 |
Charge redistribution during erase in charge trapping memory |
Ching-Huang Lu, Yingda Dong |
2016-02-09 |
| 9245642 |
Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND |
Jian Chen, Yingda Dong |
2016-01-26 |
| 9236131 |
Bias to detect and prevent short circuits in three-dimensional memory device |
Jayavel Pachamuthu, Yingda Dong, Wei Zhao |
2016-01-12 |
| 9230982 |
Protective structure to prevent short circuits in a three-dimensional memory device |
Jayavel Pachamuthu, Yingda Dong, Wei Zhao |
2016-01-05 |