| 9449700 |
Boundary word line search and open block read methods with reduced read disturb |
Grishma Shah |
2016-09-20 |
| 9443606 |
Word line dependent two strobe sensing mode for nonvolatile storage elements |
Xiaochang Miao, Gerrit Jan Hemink |
2016-09-13 |
| 9443597 |
Controlling dummy word line bias during erase in non-volatile memory |
Mohan Dunga, Masaaki Higashitani |
2016-09-13 |
| 9437321 |
Error detection method |
Huai-Yuan Tseng |
2016-09-06 |
| 9418751 |
Pre-program detection of threshold voltages of select gate transistors in a memory device |
Shota Murai, Hideto Tomiie, Masaaki Higashitani |
2016-08-16 |
| 9396808 |
Method and apparatus for program and erase of select gate transistors |
Yan Li, Masaaki Higashitani, Mohan Dunga |
2016-07-19 |
| 9361986 |
High endurance non-volatile storage |
Jian Chen, Sergei Gorobets, Steven T. Sprouse, Tien-Chien Kuo, Yan Li +3 more |
2016-06-07 |
| 9343164 |
Compensating source side resistance versus word line |
Huai-Yuan Tseng, Dana Lee, Shih-Chung Lee, Arash Hazeghi |
2016-05-17 |
| 9343160 |
Erase verify in non-volatile memory |
Shih-Chung Lee |
2016-05-17 |
| RE45871 |
Selected word line dependent select gate voltage during program |
Chun-Hung Lai, Shinji Sato, Gerrit Jan Hemink |
2016-01-26 |
| 9229644 |
Targeted copy of data relocation |
Yew Yin Ng, Mrinal Kochar, Niles Yang |
2016-01-05 |