Issued Patents 2016
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9484470 | Method of fabricating a GaN P-i-N diode using implantation | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Donald R. Disney | 2016-11-01 |
| 9450112 | GaN-based Schottky barrier diode with algan surface layer | Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +2 more | 2016-09-20 |
| 9330918 | Edge termination by ion implantation in gallium nitride | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-05-03 |
| 9324844 | Method and system for a GaN vertical JFET utilizing a regrown channel | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-04-26 |
| 9318619 | Vertical gallium nitride JFET with gate and source electrodes on regrown gate | Donald R. Disney, Hui Nie, Isik C. Kizilyalli | 2016-04-19 |
| 9318331 | Method and system for diffusion and implantation in gallium nitride based devices | David P. Bour, Isik C. Kizilyalli, Thomas R. Prunty, Linda Romano, Andrew P. Edwards +2 more | 2016-04-19 |
| 9306050 | III-V semiconductor structures including aluminum-silicon nitride passivation | James R. Shealy | 2016-04-05 |
| 9299821 | Gated III-V semiconductor structure and method | James R. Shealy | 2016-03-29 |
| 9287389 | Method and system for doping control in gallium nitride based devices | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-03-15 |
| 9269793 | Method and system for a gallium nitride self-aligned vertical MESFET | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour | 2016-02-23 |