| 9525053 |
Integrated circuit devices including strained channel regions and methods of forming the same |
Ryan M. Hatcher, Robert C. Bowen, Jorge A. Kittl |
2016-12-20 |
| 9490323 |
Nanosheet FETs with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective width |
Borna J. Obradovic, Rwik Sengupta |
2016-11-08 |
| 9466669 |
Multiple channel length finFETs with same physical gate length |
Borna J. Obradovic, Rwik Sengupta |
2016-10-11 |
| 9461114 |
Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same |
Borna J. Obradovic, Ryan M. Hatcher, Robert C. Bowen |
2016-10-04 |
| 9431492 |
Integrated circuit devices including contacts and methods of forming the same |
Jorge A. Kittl, Dharmendar Reddy Palle |
2016-08-30 |
| 9425275 |
Integrated circuit chips having field effect transistors with different gate designs |
Dharmendar Reddy Palle, Borna J. Obradovic |
2016-08-23 |
| 9406508 |
Methods of forming a semiconductor layer including germanium with low defectivity |
Jorge A. Kittl |
2016-08-02 |
| 9343303 |
Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices |
Wei-E Wang |
2016-05-17 |
| 9331176 |
Methods of forming field effect transistors, including forming source and drain regions in recesses of semiconductor fins |
Dong Won Kim |
2016-05-03 |
| 9287357 |
Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same |
Borna J. Obradovic, Rwik Sengupta, Dharmendar Reddy Palle, Robert C. Bowen |
2016-03-15 |
| 9263549 |
Fin-FET transistor with punchthrough barrier and leakage protection regions |
Chris Bowen |
2016-02-16 |
| 9257327 |
Methods of forming a Field Effect Transistor, including forming a region providing enhanced oxidation |
Kang-ill Seo |
2016-02-09 |
| 9236444 |
Methods of fabricating quantum well field effect transistors having multiple delta doped layers |
Robert C. Bowen |
2016-01-12 |
