| 9490323 |
Nanosheet FETs with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective width |
Mark S. Rodder, Rwik Sengupta |
2016-11-08 |
| 9484423 |
Crystalline multiple-nanosheet III-V channel FETs |
Jorge A. Kittl, Mark. S. Rodder |
2016-11-01 |
| 9466669 |
Multiple channel length finFETs with same physical gate length |
Mark S. Rodder, Rwik Sengupta |
2016-10-11 |
| 9461114 |
Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same |
Ryan M. Hatcher, Robert C. Bowen, Mark S. Rodder |
2016-10-04 |
| 9425275 |
Integrated circuit chips having field effect transistors with different gate designs |
Mark S. Rodder, Dharmendar Reddy Palle |
2016-08-23 |
| 9287357 |
Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same |
Mark S. Rodder, Rwik Sengupta, Dharmendar Reddy Palle, Robert C. Bowen |
2016-03-15 |
