Issued Patents 2016
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9466369 | Word line-dependent ramping of pass voltage and program voltage for three-dimensional memory | Liang Pang, Yingda Dong, Jingjian Ren | 2016-10-11 |
| 9460805 | Word line dependent channel pre-charge for memory | Liang Pang, Yingda Dong | 2016-10-04 |
| 9455263 | Three dimensional NAND device with channel contacting conductive source line and method of making thereof | Yanli Zhang, Go Shoji, Johann Alsmeier, Jayavel Pachamuthu, Yingda Dong | 2016-09-27 |
| 9443605 | Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND | Jian Chen, Yingda Dong | 2016-09-13 |
| 9437318 | Adaptive program pulse duration based on temperature | Yingda Dong, Jian Chen | 2016-09-06 |
| 9406387 | Charge redistribution during erase in charge trapping memory | Ching-Huang Lu, Yingda Dong | 2016-08-02 |
| 9401216 | Adaptive operation of 3D NAND memory | Niles Yang, James Fitzpatrick | 2016-07-26 |
| 9355735 | Data recovery in a 3D memory device with a short circuit between word lines | Jian Chen, Yingda Dong, Charles See Yeung Kwong | 2016-05-31 |
| 9349478 | Read with look-back combined with programming with asymmetric boosting in memory | Yingda Dong, Charles See Yeung Kwong, Hong-Yan Chen, Liang Pang | 2016-05-24 |
| 9336891 | Look ahead read method for non-volatile memory | Yingda Dong, Wei Zhao | 2016-05-10 |
| 9312010 | Programming of drain side word line to reduce program disturb and charge loss | Yingda Dong, Ching-Huang Lu, Wei Zhao | 2016-04-12 |
| 9299443 | Modifying program pulses based on inter-pulse period to reduce program noise | Yingda Dong, Liang Pang | 2016-03-29 |
| 9257191 | Charge redistribution during erase in charge trapping memory | Ching-Huang Lu, Yingda Dong | 2016-02-09 |
| 9245642 | Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND | Jian Chen, Yingda Dong | 2016-01-26 |
| 9236131 | Bias to detect and prevent short circuits in three-dimensional memory device | Jayavel Pachamuthu, Yingda Dong, Wei Zhao | 2016-01-12 |
| 9230982 | Protective structure to prevent short circuits in a three-dimensional memory device | Jayavel Pachamuthu, Yingda Dong, Wei Zhao | 2016-01-05 |