Issued Patents 2016
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9496262 | High mobility transistors | Manoj Mehrotra, Charles Frank Machala, III, Rick L. Wise | 2016-11-15 |
| 9484255 | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts | Shariq Siddiqui, Tenko Yamashita | 2016-11-01 |
| 9431509 | High-K metal gate | James Joseph Chambers | 2016-08-30 |
| 9412695 | Interconnect structures and methods of fabrication | Ruilong Xie, Andreas Knorr | 2016-08-09 |
| 9396951 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2016-07-19 |
| 9397003 | Method for forming source/drain contacts during CMOS integration using confined epitaxial growth techniques | Ruilong Xie | 2016-07-19 |
| 9397009 | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer | James Joseph Chambers | 2016-07-19 |
| 9397100 | Hybrid high-k first and high-k last replacement gate process | Manoj Mehrotra, Mahalingam Nandakumar | 2016-07-19 |
| 9368355 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2016-06-14 |
| 9356131 | Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance | Manoj Mehrotra | 2016-05-31 |
| 9337046 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2016-05-10 |
| 9337297 | Fringe capacitance reduction for replacement gate CMOS | Mahalingam Nandakumar | 2016-05-10 |
| 9337044 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2016-05-10 |
| 9324717 | High mobility transistors | Manoj Mehrotra, Rick L. Wise | 2016-04-26 |
| 9269636 | High quality dielectric for hi-k last replacement gate transistors | Mahalingam Nandakumar | 2016-02-23 |