| 9502564 |
Fully depleted device with buried insulating layer in channel region |
Hans-Peter Moll, Jan Hoentschel |
2016-11-22 |
| 9484457 |
Vertical floating body storage transistors formed in bulk devices and having buried sense and word lines |
Till Schloesser |
2016-11-01 |
| 9466685 |
Semiconductor structure including at least one electrically conductive pillar, semiconductor structure including a contact contacting an outer layer of an electrically conductive structure and method for the formation thereof |
Hans-Peter Moll, Thorsten Kammler |
2016-10-11 |
| 9443871 |
Cointegration of bulk and SOI semiconductor devices |
Hans-Peter Moll, Jan Hoentschel |
2016-09-13 |
| 9425189 |
Compact FDSOI device with Bulex contact extending through buried insulating layer adjacent gate structure for back-bias |
Hans-Peter Moll |
2016-08-23 |
| 9391156 |
Embedded capacitor |
Hans-Peter Moll, Jan Hoentschel |
2016-07-12 |
| 9385232 |
FD devices in advanced semiconductor techniques |
Hans-Peter Moll, Jan Hoentschel |
2016-07-05 |
| 9349842 |
Methods of forming semiconductor devices comprising ferroelectric elements and fast high-K metal gate transistors |
Till Schloesser |
2016-05-24 |
| 9337045 |
Methods of forming a semiconductor circuit element and semiconductor circuit element |
Carsten Grass |
2016-05-10 |
| 9324854 |
Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure |
Till Schloesser, Frank Jakubowski |
2016-04-26 |
