| 9508845 |
LDMOS device with high-potential-biased isolation ring |
Hongning Yang, Jiang-Kai Zuo |
2016-11-29 |
| 9496333 |
Resurf high voltage diode |
Daniel J. Blomberg, Hongning Yang, Jiang-Kai Zuo |
2016-11-15 |
| 9490322 |
Semiconductor device with enhanced 3D resurf |
Hongning Yang, Zhihong Zhang, Jiang-Kai Zuo |
2016-11-08 |
| 9466665 |
High voltage diode |
Hongning Yang, Jiang-Kai Zuo |
2016-10-11 |
| 9466687 |
Methods for producing bipolar transistors with improved stability |
Daniel J. Blomberg, Hongning Yang, Jiang-Kai Zuo |
2016-10-11 |
| 9401412 |
Methods of fabricating diodes with multiple junctions |
Hongning Yang, Jiang-Kai Zuo |
2016-07-26 |
| 9397230 |
Zener diode devices and related fabrication methods |
Weize Chen, Patrice M. Parris |
2016-07-19 |
| 9385229 |
Semiconductor device with improved breakdown voltage |
Hongning Yang, Zhihong Zhang, Jiang-Kai Zuo |
2016-07-05 |
| 9306060 |
Semiconductor devices and related fabrication methods |
Hongning Yang, Daniel J. Blomberg, Zhihong Zhang, Jiang-Kai Zuo |
2016-04-05 |
| 9281375 |
Methods of producing bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations |
Bernhard Grote, Jiang-Kai Zuo |
2016-03-08 |
| 9231120 |
Schottky diode with leakage current control structures |
Weize Chen, Patrice M. Parris |
2016-01-05 |