Issued Patents 2016
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9508845 | LDMOS device with high-potential-biased isolation ring | Xin Lin, Hongning Yang | 2016-11-29 |
| 9496333 | Resurf high voltage diode | Xin Lin, Daniel J. Blomberg, Hongning Yang | 2016-11-15 |
| 9490322 | Semiconductor device with enhanced 3D resurf | Hongning Yang, Xin Lin, Zhihong Zhang | 2016-11-08 |
| 9478456 | Semiconductor device with composite drift region | Hongning Yang | 2016-10-25 |
| 9466665 | High voltage diode | Xin Lin, Hongning Yang | 2016-10-11 |
| 9466687 | Methods for producing bipolar transistors with improved stability | Xin Lin, Daniel J. Blomberg, Hongning Yang | 2016-10-11 |
| 9466712 | Resurf semiconductor device charge balancing | Won Gi Min, Hongzhong Xu, Zhihong Zhang | 2016-10-11 |
| 9401412 | Methods of fabricating diodes with multiple junctions | Xin Lin, Hongning Yang | 2016-07-26 |
| 9385229 | Semiconductor device with improved breakdown voltage | Hongning Yang, Xin Lin, Zhihong Zhang | 2016-07-05 |
| 9343526 | Deep trench isolation | Xu Cheng, Daniel J. Blomberg, Zhihong Zhang | 2016-05-17 |
| 9331025 | Die edge sealing structures and related fabrication methods | Zhihong Zhang, Hongning Yang | 2016-05-03 |
| 9306060 | Semiconductor devices and related fabrication methods | Hongning Yang, Daniel J. Blomberg, Xin Lin, Zhihong Zhang | 2016-04-05 |
| 9281375 | Methods of producing bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations | Xin Lin, Bernhard Grote | 2016-03-08 |
| 9231083 | High breakdown voltage LDMOS device | Hongning Yang, Daniel J. Blomberg | 2016-01-05 |