Issued Patents 2016
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9502566 | Method for producing a field effect transistor including forming a gate after forming the source and drain | Claire Fenouillet-Beranger | 2016-11-22 |
| 9379213 | Method for forming doped areas under transistor spacers | Jean-Michel Hartmann, Benoit Sklenard, Maud Vinet | 2016-06-28 |
| 9343375 | Method for manufacturing a transistor in which the strain applied to the channel is increased | Frédéric Mazen, Shay Reboh, Benoit Sklenard | 2016-05-17 |
| 9246006 | Recrystallization of source and drain blocks from above | Frédéric Mazen, Benoit Sklenard, Shay Reboh | 2016-01-26 |