Issued Patents 2011
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8043947 | Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate | Weize Xiong, Manfred Ramin | 2011-10-25 |
| 7943479 | Integration of high-k metal gate stack into direct silicon bonding (DSB) hybrid orientation technology (HOT) pMOS process flow | Manuel Quevedo-Lopez | 2011-05-17 |
| 7943451 | Integration scheme for reducing border region morphology in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates | Frank Scott Johnson | 2011-05-17 |
| 7897994 | Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate | Weize Xiong, Cloves Rinn Cleavelin, Rick L. Wise | 2011-03-01 |
| 7897447 | Use of in-situ HCL etch to eliminate by oxidation recrystallization border defects generated during solid phase epitaxy (SPE) in the fabrication of nano-scale CMOS transistors using direct silicon bond substrate (DSB) and hybrid orientation technology (HOT) | — | 2011-03-01 |
| 7892908 | Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates | Frank Scott Johnson, Benjamin P. McKee, Shaofeng Yu | 2011-02-22 |
| 7883977 | Advanced CMOS using super steep retrograde wells | Jeffrey A. Babcock, Scott Balster, Alfred Haeusler, Gregory E. Howard | 2011-02-08 |