Issued Patents 2011
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8067300 | AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same | Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu | 2011-11-29 |
| 8038794 | Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device | Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Ryu Hirota | 2011-10-18 |
| 8008173 | III nitride single crystal and method of manufacturing semiconductor device incorporating the III nitride single crystal | — | 2011-08-30 |
| 8002892 | Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device | Ryu Hirota, Masaki Ueno | 2011-08-23 |
| 7915149 | Gallium nitride substrate and gallium nitride layer formation method | Fumitaka Sato, Yoshiki Miura, Akinori Koukitu, Yoshinao Kumagai | 2011-03-29 |
| 7905958 | Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device | Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Ryu Hirota | 2011-03-15 |
| 7901960 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Masato Irikura | 2011-03-08 |
| 7863167 | Method of manufacturing group III nitride crystal | Fumitaka Sato | 2011-01-04 |