KC

Kuo-Tung Chang

SL Spansion Llc.: 11 patents #1 of 260Top 1%
📍 Saratoga, CA: #8 of 561 inventorsTop 2%
🗺 California: #389 of 41,698 inventorsTop 1%
Overall (2011): #2,818 of 364,097Top 1%
11
Patents 2011

Issued Patents 2011

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
8076712 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication Chungho Lee, Ashot Melik-Martirosian, Wei Zheng, Timothy Thurgate, Chi Chang +2 more 2011-12-13
8012830 ORO and ORPRO with bit line trench to suppress transport program disturb Ning Cheng, Hiro Kinoshita, Chih-Yuh Yang, Lei Xue, Chungho Lee +3 more 2011-09-06
7998846 3-D integrated circuit system and method Eunha Kim, Jeremy A. Wahl, Shenqing Fang, Youseok Suh, Yi Ma +2 more 2011-08-16
7995386 Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb Yuji Mizuguchi, Mark Randolph, Darlene Hamilton, Yi He, Zhizheng Liu +9 more 2011-08-09
7981745 Sacrificial nitride and gate replacement Chungho Lee, Hiroyuki Kinoshita, Huaqiang Wu, Fred Cheung 2011-07-19
7952938 Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory Gulzar Kathawala, Wei Zheng, Zhizheng Liu, Sung-Yong Chung, Timothy Thurgate +2 more 2011-05-31
7943980 Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductur applications Shenqing Fang, Tim Thurgate, Youseok Suh, Allison Holbrook 2011-05-17
7915123 Dual charge storage node memory device and methods for fabricating such device Chungho Lee, Hiroyuki Kinoshita, Amol Joshi, Kyunghoon Min, Chi Chang 2011-03-29
7906395 Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications Shenqing Fang, Tim Thurgate, Youseok Suh, Allison Holbrook 2011-03-15
7907448 Scaled down select gates of NAND flash memory cell strings and method of forming same Youseok Suh, Shenqing Fang 2011-03-15
7906807 Use of a polymer spacer and Si trench in a bitline junction of a flash memory cell to improve TPD characteristics Ning Cheng, Calvin T. Gabriel, Angela T. Hui, Lei Xue, Harpreet Sachar +3 more 2011-03-15