Issued Patents 2011
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8084827 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses | Constantin Bulucea, William French, Donald M. Archer, Jeng-Jiun Yang, D. Courtney Parker | 2011-12-27 |
| 7973372 | Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants | William French, Constantin Bulucea | 2011-07-05 |
| 7968921 | Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions | Constantin Bulucea, William French, Jeng-Jiun Yang, D. Courtney Parker, Peter Johnson +1 more | 2011-06-28 |