Issued Patents 2011
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8084827 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses | William French, Donald M. Archer, Jeng-Jiun Yang, Sandeep R. Bahl, D. Courtney Parker | 2011-12-27 |
| 8034679 | Fabrication of field-effect transistor having hypoabrupt body dopant distribution below source/drain zone | — | 2011-10-11 |
| 8030151 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length | Jeng-Jiun Yang | 2011-10-04 |
| 8013390 | Semiconductor architecture having field-effect transistors especially suitable for analog applications | — | 2011-09-06 |
| 7973372 | Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants | Sandeep R. Bahl, William French | 2011-07-05 |
| 7972918 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications | — | 2011-07-05 |
| 7968921 | Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions | William French, Sandeep R. Bahl, Jeng-Jiun Yang, D. Courtney Parker, Peter Johnson +1 more | 2011-06-28 |
| 7879669 | Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length | Chih Sieh Teng, Chin-Miin Shyu, Fu-Cheng Wang, Prasad Chaparala | 2011-02-01 |
| 7863681 | Semiconductor structure utilizing empty and filled wells | — | 2011-01-04 |