Issued Patents 2011
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8035130 | Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region | Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Toshiyuki Oishi | 2011-10-11 |
| 7939943 | Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer | Katsuomi Shiozawa, Kyozo Kanamoto, Toshiyuki Oishi, Hiroshi Kurokawa, Kenichi Ohtsuka +1 more | 2011-05-10 |