Issued Patents 2011
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8035130 | Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region | Muneyoshi Suita, Yuji Abe, Toshiyuki Oishi, Yasunori Tokuda | 2011-10-11 |