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Method for fabricating multi-resistive state memory devices |
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Non-volatile memory device ion barrier |
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2011-10-25 |
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Conductive metal oxide structures in non-volatile re-writable memory devices |
Lawrence Schloss, Julie Casperson Brewer, Rene Meyer |
2011-10-04 |
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Ion barrier cap |
Lawrence Schloss, Rene Meyer, Roy Lambertson, Julie Casperson Brewer |
2011-10-04 |
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Threshold device for a memory array |
Darrell Rinerson, Julie Casperson Brewer, Christophe J. Chevallier, Roy Lambertson, Lawrence Schloss |
2011-08-09 |
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Memory using variable tunnel barrier widths |
Darrell Rinerson, Christophe J. Chevallier, Edmond R. Ward |
2011-07-26 |
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Multi-resistive state memory device with conductive oxide electrodes |
Darrell Rinerson, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier +2 more |
2011-02-15 |
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Selection device for re-writable memory |
Darrell Rinerson, Steve Kuo-Ren Hsia, Steven W. Longcor, Edmond R. Ward, Christophe J. Chevallier |
2011-02-08 |