Issued Patents 2011
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8084370 | Hafnium tantalum oxynitride dielectric | Leonard Forbes, Kie Y. Ahn | 2011-12-27 |
| 8063436 | Memory cells configured to allow for erasure by enhanced F-N tunneling of holes from a control gate to a charge trapping material | Kirk D. Prall, Luan C. Tran | 2011-11-22 |
| 8062945 | Methods of forming non-volatile memory structure with crested barrier tunnel layer | — | 2011-11-22 |
| 8058118 | Methods of forming and operating back-side trap non-volatile memory cells | — | 2011-11-15 |
| 7989362 | Hafnium lanthanide oxynitride films | Leonard Forbes, Kie Y. Ahn | 2011-08-02 |
| 7968402 | Method for forming a high-performance one-transistor memory cell | — | 2011-06-28 |
| 7968960 | Methods of forming strained semiconductor channels | Leonard Forbes, Paul A. Farrar | 2011-06-28 |
| 7964909 | Scalable high density non-volatile memory cells in a contactless memory array | — | 2011-06-21 |
| 7956426 | Lanthanide dielectric with controlled interfaces | — | 2011-06-07 |
| 7902582 | Tantalum lanthanide oxynitride films | Leonard Forbes, Kie Y. Ahn | 2011-03-08 |
| 7898850 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells | Kyu S. Min, Rhett T. Brewer, Tejas Krishnamohan, Thomas M. Graettinger, D. V. Nirmal Ramaswamy +1 more | 2011-03-01 |
| 7898022 | Scalable multi-functional and multi-level nano-crystal non-volatile memory device | — | 2011-03-01 |
| 7875529 | Semiconductor devices | Leonard Forbes, Paul A. Farrar, Hussein I. Hanafi, Warren M. Farnworth | 2011-01-25 |
| 7867850 | Enhanced multi-bit non-volatile memory device with resonant tunnel barrier | — | 2011-01-11 |