Issued Patents 2011
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8029620 | Methods of forming carbon-containing silicon epitaxial layers | Yihwan Kim, Ali Zojaji | 2011-10-04 |
| 7960236 | Phosphorus containing Si epitaxial layers in N-type source/drain junctions | Saurabh Chopra, Yihwan Kim | 2011-06-14 |
| 7960256 | Use of CL2 and/or HCL during silicon epitaxial film formation | Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang +2 more | 2011-06-14 |
| 7897495 | Formation of epitaxial layer containing silicon and carbon | Andrew Lam, Yihwan Kim | 2011-03-01 |