Issued Patents 2005
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6958515 | N-channel LDMOS with buried p-type region to prevent parasitic bipolar effects | Taylor R. Efland | 2005-10-25 |
| 6878999 | Transistor with improved safe operating area | John Lin, Sameer Pendharkar, Steven L. Jensen | 2005-04-12 |