Issued Patents 2005
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6972211 | Method of fabricating trench isolated cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-12-06 |
| 6940113 | Trench isolated cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-09-06 |
| 6939724 | Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer | Wei-Wei Zhuang, Tingkai Li, David R. Evans, Sheng Teng Hsu | 2005-09-06 |
| 6927120 | Method for forming an asymmetric crystalline structure memory cell | Sheng Teng Hsu, Tingkal Li, David R. Evans, Wei-Wei Zhuang | 2005-08-09 |
| 6911361 | Low temperature processing of PCMO thin film on Ir substrate for RRAM application | Fengyan Zhang, Wei-Wei Zhuang, Sheng Teng Hsu | 2005-06-28 |
| 6905937 | Methods of fabricating a cross-point resistor memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-06-14 |
| 6887523 | Method for metal oxide thin film deposition via MOCVD | Wei-Wei Zhuang, Sheng Teng Hsu | 2005-05-03 |
| 6876521 | Method of making a solid state inductor | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-04-05 |
| 6875651 | Dual-trench isolated crosspoint memory array and method for fabricating same | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-04-05 |
| 6849891 | RRAM memory cell electrodes | Sheng Teng Hsu, Fengyan Zhang, Wei-Wei Zhuang, Tingkai Li | 2005-02-01 |
| 6849564 | 1R1D R-RAM array with floating p-well | Sheng Teng Hsu, Wei-Wei Zhuang, Fengyan Zhang | 2005-02-01 |
| 6849467 | MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer | Tingkai Li, Robert Barrowcliff, David R. Evans, Sheng Teng Hsu | 2005-02-01 |
| 6841844 | Air gaps copper interconnect structure | Sheng Teng Hsu | 2005-01-11 |