RF

Robert J. Falster

MM Memc Electronic Materials: 8 patents #1 of 28Top 4%
Overall (2005): #1,831 of 245,428Top 1%
8
Patents 2005

Issued Patents 2005

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
6955718 Process for preparing a stabilized ideal oxygen precipitating silicon wafer Vladimir V. Voronkov 2005-10-18
6930375 Silicon on insulator structure having an epitaxial layer and intrinsic gettering Jeffrey L. Libbert 2005-08-16
6913647 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon Harold W. Korb 2005-07-05
6897084 Control of oxygen precipitate formation in high resistivity CZ silicon Martin Jeffrey Binns, Jeffrey L. Libbert 2005-05-24
6896728 Process for producing low defect density, ideal oxygen precipitating silicon Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo, Steve A. Markgraf +3 more 2005-05-24
6858307 Method for the production of low defect density silicon Vladimir V. Vornokov, Mohsen Banan 2005-02-22
6849119 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor Marco Cornara, Daniela Gambaro, Massimiliano Olmo 2005-02-01
6849901 Device layer of a silicon-on-insulator structure having vacancy dominated and substantially free of agglomerated vacancy-type defects 2005-02-01